Counsel that keeps the mission aligned with the Joint Force.

Ron was named Chairman of the Board of Blackwatch in 2018. He brings to the company seasoned operations and business development experience in the Defense and Civilian sectors of the federal IT and engineering services marketplace. His background includes extensive executive experience with large companies, such as Sperry Corp. and United Technologies, as well as several smaller enterprises.

Ron led the development of RS Information Systems Inc. (RSIS), taking it from a small $10M company with 85 employees to a company with 2,000 professionals serving a diverse government client base nationwide. RSIS was one of the fastest growing companies in the country, making it onto the Washington Technology “Fast 50” list for an unprecedented eight years in a row.

After the sale of RSIS, Ron was then an owner and partnership consultant for Energy Enterprise Solutions LLC (EES), a populated joint-venture company specializing in high technology solutions for the U.S. Department of Energy, Defense, and Homeland Security. EES achieved revenues exceeding $1.76B over the seven-year life of this joint venture agreement.

Ron holds a Bachelor of Science degree from the University of Wisconsin and is a graduate of the Yale University Executive Management program. He is a Life Member of the U.S. Navy League and the Armed Forces Communications and Electronics Association (AFCEA).

Mike has more than 25 years of silicon carbide (SiC) epitaxy experience, more than 60 peer reviewed publications, and three U.S. patents. His professional mission is to improve the techniques used to grow and characterize SiC epitaxial layers, increasing the overall quality of SiC epitaxy, especially for thicker epitaxial layers. He is also passionate about training the next generation of the SiC workforce about SiC epitaxy.

Prior to joining Blackwatch, Mike was a consultant for companies providing guidance on SiC epitaxy. Prior to consulting, he was Technical Director, SiC at Veeco, working on process development for their SiC epitaxy tool. Prior to Veeco, he was the Director of Silicon Carbide Epitaxy at Global Power Technologies Group where he chose a green site for a SiC epitaxy operation, designed the facility and directed construction. He was responsible for all SiC epitaxy operations, including custom epitaxy for R&D and low volume manufacturing. Prior to SemiQ, he was a Global Applications Engineer and Senior SiC Epitaxy Specialist at Dow Corning. He established and enabled SiC epitaxial capability with chlorosilane chemistry and developed and implemented 100 mm and >50 um (5 KV) SiC epitaxy processes. Early in his career, he was a SiC Senior Engineer at Northrop Grumman, as well as a visiting scientist at Linköping University in Sweden. He served as a SEMI member leading a SiC resistivity standards group and participating in other SEMI SiC groups.

Mike has a Bachelor of Science in Physics from Worcester Polytechnic Institute and a Ph.D. in Physics from the University of Pittsburgh, with a focus on SiC and GaN materials.

Dr. Adam J. Morgan is Co-Founder, CEO, and Technical Lead for Packaging Design at NoMIS Power. He spearheads the company’s efforts in SiC technology with U.S. government agencies, business partners, and key clients.

An expert in packaging design, Dr. Morgan has experience in Level-1 power discrete and power module packaging, as well as Level-2 and Level-3 power packaging for hard- and soft-switching SiC-based power converters rated for 600 V to 25 kV.

Prior to founding NoMIS, Dr. Morgan was a postdoctoral research scientist at SUNY Polytechnic Institute in Albany, NY, working on wide-bandgap power semiconductor device research regarding high temperature and high voltage power packaging and power electronics testing as part of the Center for Advanced Semiconductor Power Electronics Research (CASPER).

Dr. Morgan has previously worked in the corporate research center for ABB US, the Sandia National Laboratories, and the National Institute of Standards and Technology. He holds a Ph.D. in Electrical Engineering from North Carolina State University, an M.S. in Electrical Engineering from NC State, and a B.S. in Electrical Engineering from Binghamton University, NY.

Dr. Justin M. Lynch is a Power Semiconductor Device Engineer and Lead for High Voltage Technology at NoMIS Power. He is a member of NoMIS Power’s SiC power semiconductor device development team, focusing on 650 V, 1.2 kV, 1.7 kV, and 3.3 kV SiC product lines.

Dr. Lynch’s previous research has focused on the optimization of low-voltage to high-voltage SiC power devices. He has worked on the design, fabrication, development, and testing of 1.2 kV to 20 kV SiC diodes, JFETs, MOSFETs, and IGBTs across several SiC foundries, including NY-PEMC, ADI-Hillview, SiCamore Semi, Clas-SiC, and X-FAB.

Dr. Lynch holds a Ph.D. in Nanoscale Engineering from the University at Albany, SUNY and a B.S. in Nanoscale Engineering from the University at Albany, SUNY.

Darren Michael Hansen is an advanced materials consultant and semiconductor technology executive with more than 25 years of experience turning silicon carbide from a research material into products, partnerships, and organizations that serve power electronics, semiconductor manufacturing, and national competitiveness. Through Hansen Technology Consultants, he advises semiconductor companies, investors, and research organizations on technology strategy, commercialization, manufacturing readiness, intellectual property, and technical risk.

Hansen was Chief Technology Officer of Pallidus, where he led silicon carbide substrate and epitaxy technology derived from siloxane polymer-based source methods at diameters above 150 mm. He set the technical direction across crystal growth, wafer technology, epitaxial growth, process engineering, and intellectual property, and he worked with the board on investment planning, partnerships, and technology positioning.

Earlier, he spent nearly two decades with Dow Corning and Dow. As SiC Technology Director, he built a silicon carbide product line from crystal growth through epitaxy. He later led Dow’s global conductive composite technology platform, directing scientists, engineers, and technicians and serving as a technology liaison to major industrial customers. He began his career in silicon carbide as a process engineering specialist and, before that, was a member of the technical staff at Alfalight, supporting III-V laser diode manufacturing.

Hansen is an author or co-author of more than 25 publications and an inventor on multiple patent families. He is a recipient of an R&D 100 Award and a former National Science Foundation Graduate Research Fellow. He holds a Ph.D. in Chemical Engineering from the University of Wisconsin–Madison and a B.S.E. in Chemical Engineering from the University of Michigan, both summa cum laude.

John brings more than 19 years of experience in semiconductor reliability, microelectronics process engineering and fabrication, and technical program leadership. Prior to joining Blackwatch, he managed a multi-site Silicon Technology Development Quality and Reliability lab network at Intel Corporation, delivering year-over-year improvements in quality and efficiency while leading industry-leading, first-of-its-kind semiconductor lab infrastructure and automation initiatives. Before Intel, John spent 11 years with the Defense Microelectronics Activity (DMEA), a key Blackwatch partner, where he led reliability and test programs as well as process integrations supporting critical defense requirements.

A people-focused leader, John builds high-performing teams grounded in disciplined execution, risk management, and stakeholder engagement. His leadership philosophy emphasizes continuous improvement and learning, ensuring technical excellence and operational success. He was awarded the SMART Scholar Award in 2010, which funded his graduate studies in partnership with DMEA.

John holds a Ph.D. and M.S. in Electrical Engineering from the University of California, Davis, and a B.S. in Electrical Engineering from the University of the Pacific.